december 2011 fch47n60n 600v n-channel mosfet ?2010 fairchild semiconductor corporation fch47n60n rev. c1 www.fairchildsemi.com 1 supremos tm fch47n60n n-channel mosfet 600v, 47a, 62m features ? 650v @t j = 150 o c ?r ds(on) = 51.5m ( typ.)@ v gs = 10v, i d =23.5 a ? ultra low gate charge ( typ.q g =115nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description the supremos mosfet, fairchild?s next generation of high voltage super-junction mosfets, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. by util izing this advanced te chnology and precise process control, supremos provides world class rsp, superior switching performance and ruggedness. this supremos mosfet fits the industry?s ac-dc smps requirements for pfc, server/telecom power, fpd tv power, atx power, and industrial power applications. d g s g s d to-247 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 47 a -continuous (t c = 100 o c) 29.7 i dm drain current - pulsed (note 1) 141 a e as single pulsed avalanche energy (note 2) 3068 mj i ar avalanche current 15.7 a e ar repetitive avalanche energy 3.7 mj dv/dt mosfet dv/dt ruggedness 100 v/ns peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 368 w - derate above 25 o c2.94w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.34 o c/w r cs thermal resistance, case to heat sink (typical) 0.24 r ja thermal resistance, junction to ambient 40 *drain current limited by maximum junction temperature
fch47n60n 600v n-channel mosfet fch47n60n rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fch47n60n fch47n60n to-247 - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v, t c = 25 o c 600 - - v bv dss t j breakdown voltage temperature coefficient i d = 1ma, referenced to 25 o c - 0.78 - v/ o c i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 10 a v ds = 480v, v gs = 0v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2-4v r ds(on) static drain to source on resistance v gs = 10v, i d = 23.5a 51.5 62.0 m g fs forward transconductance v ds = 40v, i d = 23.5a 56 s c iss input capacitance v ds = 100v, v gs = 0v f = 1mhz - 5037 6700 pf c oss output capacitance - 200 270 pf c rss reverse transfer capacitance - 2.5 4.0 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1mhz - 108 pf c oss eff. effective output capacitance v ds = 0v to 380v, v gs = 0v - 511 pf q g(tot) total gate charge at 10v v ds = 380v, i d = 23.5a, v gs = 10v (note 4) - 115 151 nc q gs gate to source gate charge - 21 nc q gd gate to drain ?miller? charge - 34 nc esr equivalent series resistance(g-s) drain open - 0.9 t d(on) turn-on delay time v dd = 380v, i d = 23.5a r gen = 4.7 (note 4) -1132ns t r turn-on rise time - 9 28 ns t d(off) turn-off delay time - 135 280 ns t f turn-off fall time - 22 54 ns i s maximum continuous drain to source diode forward current - - 47 a i sm maximum pulsed drain to source diode forward current - - 141 a v sd drain to source diode forward voltage v gs = 0v, i sd = 23.5a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 23.5a di f /dt = 100a/ s - 495 - ns q rr reverse recovery charge - 12 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 15.7a, r g = 25 , starting t j = 25 c 3. i sd 47a, di/dt 200a/ s, v dd 380v, starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
fch47n60n 600v n-channel mosfet fch47n60n rev. c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2468 1 10 100 500 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 10 30 1 10 100 300 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15v 10v 8v 6v 5v 0.40.60.81.01.21.4 1 10 100 400 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 40 80 120 160 40 60 80 100 120 140 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 100 600 1 10 10 2 10 3 10 4 10 5 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0306090120 0 2 4 6 8 10 *note: i d = 23.5a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
fch47n60n 600v n-channel mosfet fch47n60n rev. c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 23.5a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 100 1000 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.24 o c/w max. 2. duty factor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fch47n60n 600v n-channel mosfet fch47n60n rev. c1 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fch47n60n 600v n-channel mosfet fch47n60n rev. c1 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fch47n60n 600v n-channel mosfet fch47n60n rev. c1 www.fairchildsemi.com 7 mechanical dimensions to-247
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